Integral estimate of LSI radiation hardness as a fuzzy number of multiplicity of nodes

Abstract

The analysis of the LSI behavior under radiation exposure at functional and logical level of description was carried out. It is shown that there are deterministic and non-deterministic failures typical when exposed to ionizing radiation. In the first case, the behavior of complex devices is determined by the specific ratio of the radiation-sensitive parameters of the elements, in the second case—the statistical variation of the failure threshold levels for the same type of samples.