Sputtered indium tin oxide (ITO) was used as a rectifying contact on lightly n-type (n ∼ 1016 cm−3) β-Ga2O3 and found to exhibit excellent Schottky characteristics up to 500 K, with no thermally driven degradation to this temperature. The barrier height extracted from current–voltage characteristics was 1.15 ± 0.04 eV at 300 K and 0.78 ± 0.03 eV at 500 K, with thermionic behavior of charge carriers over the image force lowered Schottky barriers dominating the carrier transport at low temperatures. The breakdown voltages were 246, 185, and 144 V at 300, 400 and 500 K, respectively. At 600 K, the diodes suffered irreversible thermal damage. The diode on/off ratio was >105 for reverse biases up to 100 V. At higher reverse voltage, the current shows an I ∝ Vn relationship with voltage, indicating a trap-assisted space-charge-limited conduction (SCLC) mechanism. We observed this SCLC relation when the reverse voltage was larger than 100 V for 300 and 400 K and at <100 V at 500 K. The ITO can also be used to make Ohmic contacts on heavily doped Ga2O3 suggesting the possibility of completely optically transparent power devices.
CITATION STYLE
Xia, X., Xian, M., Fares, C., Ren, F., Tadjer, M., & Pearton, S. J. (2021). Temperature dependent performance of ITO Schottky contacts on β-Ga2O3. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 39(5). https://doi.org/10.1116/6.0001211
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