Lateral infrared photovoltaic effects in Ag-doped ZnO thin films

Abstract

A transient lateral photovoltaic effect has been observed in Ag-doped ZnO thin films. Under the nonuniform irradiation of a 1064 nm pulsed laser, the photovoltaic response shows high sensitivity to the spot position on the film surface. The highest photovoltaic responsivity of 27.1 mV mJ(-1) was observed, with a decline time of ∼1.5 ns and a full width at half-maximum (FWHM) of ∼4 ns. The photovoltaic position sensitivity can reach about 3.8 mV mJ(-1) mm(-1). This paper demonstrates the potential of Ag-doped ZnO films in the position-sensitive infrared detection. Copyright © 2010 Wenwei Liu et al.