Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO[sub 2]

Abstract

We investigated the effects of fluorine treatments on the electrical properties and electronic structures of plasma-enhanced atomic layer deposition HfO 2 gate oxides, depending on the treatment process. Pre- and postoxide-deposition fluorine treatments were carried out using CF 4 plasma. Improved dielectric properties were achieved by predeposition treatment, while degradation of electrical properties was observed for postdeposition treatment. Based on the electronic structure analysis using X-ray photoemission spectroscopy and near-edge X-ray absorption fine structures, we found that the enhanced dielectric properties of the pretreated HfO 2 are induced by the defect passivation and conduction-band offset increase. © 2009 The Electrochemical Society.