Quantification of Defect Dynamics in Unsteady-State and Steady-State Czochralski Growth of Monocrystalline Silicon [J. Electrochem. Soc., 151, G663 (2004)]

Abstract

Mostcommon microdefects in Czochralski silicon, voids and dislocation loops, areformed by agglomeration of point defects, vacancies, and self-interstitials, respectively.Dynamics of formation and growth of the microdefects along withthe entire crystal pulling process is simulated. The Frenkel reaction,the transport and nucleation of the point defects, and thegrowth of the microdefects are considered to occur simultaneously. Thenucleation is modeled using the classical nucleation theory. The microdefectsare approximated as spherical clusters, which grow by a diffusion-limitedkinetics. The microdefect distribution at any given location is capturedon the basis of the formation and path histories ofthe clusters. The microdefect type and size distributions in crystalsgrown under various steady states as well as unsteady statesare predicted. The developed one-dimensional model captures the salient featuresof defect dynamics and reveals significant differences between the steady-statedefect dynamics and the unsteady-state defect dynamics. The model predictionsagree very well with the experimental observations. Various predictions ofthe model are presented, and results are discussed. ©2004 TheElectrochemical Society. All rights reserved.