Structural origin of set-reset process in a new bulk Si15Te 83Ge2 phase-change memory material

Abstract

A new phase-change memory material, in bulk, has been prepared by melt-quenching technique, which has a better glass forming ability. This sample is set and resettable relatively easily for several cycles at 2mA SET and RESET input currents, and is likely to be a suitable material for phase-change memory applications. Raman scattering studies have been undertaken during the SET and RESET operations to elucidate the local structural transformations that occur during these operations. © 2011 Author(s).