We presented an extended-wavelength InGaAsSb infrared unipolar barrier detector working at room temperature. The detector with GaSb lattice-matched InGaAsSb absorb layer and AlGaAsSb unipolar barrier can achieve high material quality and low dark current. The dark current density was 2.29×10-5 A/cm2 at 0 bias at 77K. At room temperature the dark current at 0 bias was 4×10-3 A/cm2 and the R0A is high to 44 Ω · cm2. We fabricated the cone arrays in the InGaAsSb absorb layer to reduce the reflection of the radiation and extend the spectrum response to visible area. The extended-wavelength detector had the response from the wavelength of 0.4 μm. Further experiment showed the cone arrays also reduced the dark current of the detector at room temperature.
CITATION STYLE
Hao, H., Wang, G., Han, X., Jiang, D., Sun, Y., Guo, C., … Niu, Z. (2018). Extended-wavelength InGaAsSb infrared unipolar barrier detectors. AIP Advances, 8(9). https://doi.org/10.1063/1.5026839
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