Physics based modelling of short-channel nanowire MOSFET

Abstract

A modelling framework for short channel nanowire (NW) MOSFETs that covers a wide range of operating conditions is presented. The device electrostatics in the subthreshold regime is dominated by the inter-electrode capacitive coupling, which, in the case of doublegate (DG) devices, is analyzed in terms of conformal mapping techniques. Previously, we have shown that these results can also be successfully applied to the NW MOSFET, by performing an appropriate mapping to compensate for the difference in gate control between the two devices. Near and above threshold, the influence of the electronic charge is taken into account in a precise, self-consistent manner by combining suitable model expressions with Poisson's equation. The models are verified by comparison with numerical device simulations. © 2008 IOP Publishing Ltd.