The accurate measurement of chemistry of epitaxial layers by high angle annular dark field imaging requires knowledge of the scanning transmission electron microscopy specimen thickness. Here, it is shown how the study of the intensity of the Fourier coefficients of high angle annular dark field images, as a function of the objective lens defocus, can be used to measure the specimen thickness with the highest accuracy in the location of the area of interest.
CITATION STYLE
Grillo, V., & Carlino, E. (2008). Novel Method for the Measurement of STEM Specimen Thickness by HAADF Imaging. In Microscopy of Semiconducting Materials 2007 (pp. 165–168). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8615-1_35
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