Direct White Noise Characterization of Short-Channel MOSFETs

Abstract

On-wafer evaluation of white thermal and shot noise in nanoscale MOSFETs is demonstrated by directly sensing the drain current under zero- and nonzero-drain-bias (Vd) conditions for the first time, without recourse to a hot noise source, commonly needed in noise figure measurement. The dependence of white noise intensity on the drain bias clearly shows thermal noise at Vd = 0 V and shot noise at Vd > 0 V with its gate-bias-dependent suppression. An empirical expression for the Fano factor (shot-noise suppression factor) that is well-behaved even at Vd = 0 V exactly and suitable for measurement-based evaluation is proposed. The direct measurement approach could allow more accurate and predictive noise modeling of RF MOSFETs than has conventionally been possible.