Metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated on the carbon face of 4H-SiC were characterized following different postoxidation annealing methods used to passivate the oxide-semiconductor (O-S) interface. Of the various processes studied, sequential postoxidation annealing in NO followed by atomic hydrogen gave the lowest interface trap density (D it). Direct oxidation/passivation in NO yielded somewhat better I-V characteristics, though all passivation ambients produced approximately the same breakdown field strength. n-Channel MOSFETs showed high channel mobility at low field, which is likely caused by the presence of mobile ions at the O-S interface. Comparisons with the silicon face are presented for interface trap density, oxide breakdown field, and channel mobility. These comparisons suggest that the carbon face does not offer significant performance advantages. © 2010 TMS.
CITATION STYLE
Chen, Z., Ahyi, A. C., Zhu, X., Li, M., Isaacs-Smith, T., Williams, J. R., & Feldman, L. C. (2010). MOS characteristics of c-face 4H-SiC. In Journal of Electronic Materials (Vol. 39, pp. 526–529). https://doi.org/10.1007/s11664-010-1096-5
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