Annealing effect and photovoltaic properties of nano-ZnS/textured p-Si heterojunction

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Abstract

The preparation and characterization of heterojunction solar cell with ZnS nanocrystals synthesized by chemical bath deposition method were studied in this work. The ZnS nanocrystals were characterized by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Lower reflectance spectra were found as the annealing temperature of ZnS film increased on the textured p-Si substrate. It was found that the power conversion efficiency (PCE) of the AZO/ZnS/textured p-Si heterojunction solar cell with an annealing temperature of 250°C was η = 3.66%. © 2013 Ji et al.; licensee Springer.

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Ji, L. W., Hsiao, Y. J., Tang, I. T., Meen, T. H., Liu, C. H., Tsai, J. K., … Wu, Y. S. (2013). Annealing effect and photovoltaic properties of nano-ZnS/textured p-Si heterojunction. Nanoscale Research Letters, 8(1), 1–6. https://doi.org/10.1186/1556-276X-8-470

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