Excellent ferroelectric Hf0.5Zr0.5O2thin films with ultra-thin Al2O3serving as capping layer

Abstract

Hf0.5Zr0.5O2 (HZO) has become one of the most popular HfO2 based ferroelectric thin films due to its huge potential to integrate low-cost high-density nonvolatile ferroelectric memory. Most researchers sandwiched the HZO between metals, such as TiN, and then adopted post-deposition high temperature anneal to improve the ferroelectricity and reliability of the film. In this work, the effect of a thin dielectric Al2O3 layer with different thicknesses to replace a metallic capping layer on the ferroelectric properties of a HZO (10 nm) thin film is evaluated, and we also compared the effects of TiN and W bottom electrodes on the properties of a capacitor. The results showed that the TiN/Al2O3 (1 nm)/HZO/W capacitor performed the best with a maximum 2Pr as high as 31.4 μC/cm2 at an electric field of ±3 MV/cm and very low leakage currents. In addition, the fatigue studies demonstrated the capacitor's excellent endurance properties with continuous cycling up to 1010 cycles. The use of an ultra-thin Al2O3 layer with excellent capping effects would significantly simplify the integration process of HfO2-based ferroelectric memory.