Optoelectronic properties of InAs/GaSb superlattices with asymmetric interfaces

Abstract

In this work the optoelectronic properties of InAs/GaSb superlattices are investigated. The k·p method and four-band Kane model were used to calculate the electronic states in the structure at 0K. Superlattices with different period thickness and two types of interfaces were considered. In the calculations strain and nonparabolicity effects were taken into account. Transition energies and the corresponding cut-off wavelengths were determined.