A prominent challenge towards novel nanoelectronic technologies is to understand and control materials functionalities down to the smallest scale. Topological defects in ordered solid-state (multi-)ferroic materials, e.g., domain walls, are a promising gateway towards alternative sustainable technologies. In this article, we review advances in the field of domain walls in ferroic materials with a focus on ferroelectric and multiferroic systems and recent developments in prototype nanoelectronic devices.
CITATION STYLE
Sharma, P., Schoenherr, P., & Seidel, J. (2019). Functional ferroic domain walls for nanoelectronics. Materials, 12(18). https://doi.org/10.3390/ma12182927
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