We fabricated three types of high luminous efficiency white light emitting diodes (LEDs). The first is the white LED, which had a high luminous efficiency (n 1) of 161 1m/W with the high luminous flux (φ v) of 9.89 1m at a forwardbias current of 20 mA. The blue LED had a high power (φ e) of 42.2 mW and high external quantum efficiency (η ex) of 75.5%. The second is the high luminous efficiency white LED with a low voltage (V f) of 2.80 V, which was almost equal to the theoretical limit, η L and wall-plug efficiency (WPE) is 169 1m/W and 50.8%, respectively, at 20 mA. They are approximately twice higher than those of a tri-phosphor fluorescent lamp (90 1m/W and 25%). The third is the high power white LED fabricated from the high power blue LED with high φ e of 651 mW at 350 mA. φ v, η L and WPE of the high power white LED are 145 1m, 134 1m/W and 39.6% at 350 mA, respectively. Moreover, at 1 A, φ v and η L, were 361 1m and 97 1m/W, respectively. Thus φ v is equivalent to that of a 30 W-Class incandescent lamp. And, η L is slightly higher than that of a tri-phosphor fluorescent lamp. Moreover, we fabricated the high power near ultra-violet, bluish-green and green LEDs, whose φ e at 350 mA were 675 mA, 325 mW, and 236 mW, respectively. φ v of the green LED was 128 1m at 350 mA. ©2008 WILEY-VCH Verlag GmbH & Co. KGaA.
CITATION STYLE
Narukawa, Y., Sano, M., Sakamoto, T., Yamada, T., & Mukai, T. (2008). Successful fabrication of white light emitting diodes by using extremely high external quantum efficiency blue chips. Physica Status Solidi (A) Applications and Materials Science, 205(5), 1081–1085. https://doi.org/10.1002/pssa.200778428
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