Two-dimensional approach to fluorescence yield XANES measurement using a silicon drift detector

Abstract

The objective of this article is to describe the capability of a two-dimensional (2D) approach to X-ray absorption near-edge structure (XANES) measurement by means of a partial fluorescence yield (PFY) method. 2D-XANES measurements were achieved by using a silicon drift detector as an energy-dispersive fluorescence detector. The advantage of this technique is that it allows full surveys of X-ray fluorescence data that are lost in conventional PFY measurements. The availability of a map approach was demonstrated by applying it to XANES measurements in both a diluted (Mn-doped nano-diamond) and a concentrated (MnO crystal) manganese sample. The 2D approach clearly distinguished between the PFY spectra of Mn and O atoms, where absorption edges of both elements are close to each other. Further, the 2D approach extracted an unambiguous PFY spectrum of phosphorus in the XANES measurement of SS304 (P < 0.045 wt%). © 2011 International Union of Crystallography.