Characterization of InP1-xBix Alloy grown by Liquid Phase Epitaxy

Abstract

I have investigated the effect of Bi incorporation on InPBi layers grown by liquid phase epitaxial technique. High resolution x-ray diffraction (HRXRD) patterns show high crystalline quality and secondary ion mass spectroscopy (SIMS) technique is used to get the amount of Bi incorporated into the layer ~ 1.25%. 10K Photoluminescence is clearly resolved that maximum bandgap reduction of 20meV.