Abstract
Higher Ion/Ioff and a low off state leakage is desirable for a selector diode for memory applications. Punch through based triangular barrier bidirectional Si NIPIN selector possess high on-off current ratio (>1 X 104) with a low off state leakage current. An Ion/Ioff >1X 106 at 1 V with an Ioff of 76 nA at 0.5 V, for NIPIN, has been demonstrated here, by scaling the i-region length and delta-p doping by simulation results which are calibrated with experimental results.
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CITATION STYLE
Das, B., Schulze, J., & Ganguly, U. (2019). Effect of delta-p doping and i-region length scaling on ion/ioff in si nipin diode for selector application. In Springer Proceedings in Physics (Vol. 215, pp. 671–674). Springer Science and Business Media, LLC. https://doi.org/10.1007/978-3-319-97604-4_103
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