Abstract
Total ionizing dose (TID) effects and radiation tests of complex multifunctional Very-large-scale integration (VLSI) integrated circuits (ICs) rise up some particularities as compared to conventional ?simple? ICs. The main difficulty is to organize informative and quick functional tests directly under irradiation. Functional tests approach specified for complex multifunctional VLSI devices is presented and the basic radiation test procedure is discussed in application to some typical examples.nema
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CITATION STYLE
Boychenko, D., Kalashnikov, O., Nikiforov, A., Ulanova, A., Bobrovsky, D., & Nekrasov, P. (2015). Total ionizing dose effects and radiation testing of complex multifunctional VLSI devices. Facta Universitatis - Series: Electronics and Energetics, 28(1), 153–164. https://doi.org/10.2298/fuee1501153b
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