This article reviews our THz-spectroscopy results on the intra-excitonic transitions of different III-V multi quantum well structures. Following a brief introduction to THz Time-Domain Spectroscopy a detailed description to the data analysis and extraction of refractive index and absorption is given. The behavior of the induced excitonic THz absorption in GaAs/(AlGa)As and (GaIn)As/GaAs multi quantum well structures is compared. Good agreement with previous experiments on the GaAs/(AlGa)As system [1,2] is obtained. A distinctly different behaviour is observed for the (GaIn)As/GaAs structures. © 2009 Springer-Verlag Berlin Heidelberg.
CITATION STYLE
Chatterjee, S., Grunwald, T., Koch, S. W., Khitrova, G., Gibbs, H. M., & Hey, R. (2009). Terahertz detection of many-body signatures in semiconductor heterostructures. Advances in Solid State Physics, 48, 269–280. https://doi.org/10.1007/978-3-540-85859-1_21
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