Secondary phase formation in Zn-rich Cu2ZnSnSe4-based solar cells annealed in low pressure and temperature conditions

Abstract

Zn-rich Cu2ZnSnSe4 (CZTSe) films were prepared by a two-step process consisting in the DC-magnetron sputtering deposition of a metallic stack precursor followed by a reactive anneal under a Se + Sn containing atmosphere. Precursor composition and annealing temperature were varied in order to analyze their effects on the morphological, structural, and optoelectronic properties of the films and solar cell devices. Raman scattering measurements show the presence of ZnSe as the main secondary phase in the films, as well as the presence of SnSe at the back absorber region of the films processed with lower Zn-excess values and annealing temperatures. The ZnSe phase is found to accumulate more towards the surface of the absorber in samples with lower Zn-excess and lower temperature annealing, while increasing Zn-excess and annealing temperature promote its aggregation towards the back absorber region of the devices. These measurements indicate a strong dependence of these process variables in secondary phase formation and accumulation. In a preliminary optimization of both the composition and reactive annealing process, a solar cell with 4.8% efficiency has been fabricated, and potential mechanisms limiting device efficiency in these devices are discussed. Copyright © 2014 John Wiley & Sons, Ltd. Developments of a low temperature and pressure annealing process for the formation of Cu2ZnSnSe4 thin films from sputter deposited metallic precursors are presented, with a resulting champion device efficiency of 4.8%. Controlling the formation and accumulation of secondary phases is critical in order to improve the prospects of this technology. In this work Raman scattering spectroscopy is used to study the formation of secondary phases, which depend very strongly on the annealing temperature and precursor Zn-excess. © 2014 John Wiley & Sons, Ltd.