Effect of Implanted Phosphorus Profile on iVoc Variations During Firing Process of n-type Silicon

Abstract

Electrical activation of implanted phosphorus can be carried out simultaneously with boron dopants at high temperatures or separately at lower temperatures. In this study, we investigate the effect of high and low-temperature annealing processes for dopant activation following the phosphorous implantation process in n-type c-Si. Symmetrically implanted wafers are activated at 875 °C (low temperature) and 1050 °C (high temperature) and subsequently coated with PEC VD SiNx:H. iVoc values of the samples activated at 1050 °C significantly decrease while those for the samples activated at 875 °C increase at a typical firing peak temperature which is generally applied for fire-through contact formation. We also show a strong dependence of iVoc values of phosphorous implanted and unimplanted c-Si, which are activated at both high and low temperatures, on peak firing temperature.