JMS Transactions

Abstract

The proceedings contain 36 papers. The topics discussed include: using the wave layout style to boost the digital ICs electrical performance in the radioactive environment; advanced semiconductor devices for future CMOS technologies; physical insights on the design of UTB devices, including FinFETs; 14nm FDSOI technology for high-speed and energy-efficient CMOS; substrate innovation for extending Moore and more than Moore law; ultralow-voltage design and technology of silicon-on thin-buried-oxide (SOTB) CMOS for high energy efficient electronics in IoT era; n-junctionless transistor prototype: manufacturing using a focused ion beam system; high performance III-V-on-insulator MOSFETs on Si realized by direct wafer bonding applicable to large wafer size; germanium junctionless MOSFET with steep subthreshold swing; direct characterization of impact ionization current in silicon-on-insulator body-contacted MOSFETs; and threshold voltage modeling for dynamic threshold UTBB SOI in different operation modes.