Substrate Fermi level effects in photocatalysis on oxides: Properties of ultrathin TiO2 /Si films

Abstract

Photocatalysis has widespread applications from solar cells to photolithography. We studied the photocatalytic properties of TiO2 films of thicknesses down to 2 nm, grown on n -type and p -type silicon wafers, using the oxidation of isopropanol as a model system. Direct in vacuo mass spectrometry measurements were performed under irradiation above the TiO 2 bandgap. We present a model consistent with our experimental results, which indicate that only near-surface electron-hole pair generation is relevant and that the reaction rate can be controlled by varying the substrate Fermi level in going from n -type to p -type silicon, by approximately a factor of 2. © 2009 American Institute of Physics.