Abstract
Results of indium phosphide structures research, showing the possibility of using in the near infrared range photocathodes of InP/InGaAs, are represented. An optimal method of obtaining the atomically clean indium phosphide surface was suggested. The spectral characteristics of InP/InGaAs heterostructure were given. The results of an experimental study of pin-diode, which was used as the receiver of photoelectrons, are presented.
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CITATION STYLE
Smirnov, K. J., Davydov, V. V., Glagolev, S. F., Rodygina, N. S., & Ivanova, N. V. (2018). Photocathodes for near infrared range devices based on InP/InGaAs heterostructures. In Journal of Physics: Conference Series (Vol. 1038). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/1038/1/012102
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