Fabrication of MoSe 2 and ZnO: Al based heterojunction structure

Abstract

Transition metal dichalcogenides (TMDC) material Molybdenum Selenide (MoSe2) is gaining significant attention for its numerous applications in optoelectronic and photocatalytic systems. Here we have reported the fabrication of heterojunction using MoSe 2 and ZnO: Al. The configuration used for device fabrication is FTO/ZnO: Al/ MoSe 2 / Ag. MoSe 2 is synthesized using solvo-thermal method and further exfoliated into a few-layers by liquid chemical exfoliation. Rf-sputtering technique is used to deposit thin film of ZnO: Al. In this heterojunction structure, MoSe 2 acts as a hole transport layer and ZnO: Al as an electron transport layer. I-V measurements show diode like characteristics with forward knee voltage of 0.66 V. Ideality factor equals to two is observed in low voltage region. High reverse saturation current is obtained because of low barrier height. Further modifications are required to obtain good quality device.