Low-temperature grown InN films based on sapphire substrate with ECR-plasma enhanced MOCVD

Abstract

Prefer-oriented and fine grained polycrystalline InN films are deposited on sapphire substrate using electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) system at low-temperature. Trimethyl indium (TMIn) and N2 are applied as precursors for In and N, respectively. The influence of deposition temperature on the structural, electrical and morphological properties of InN films is systematically investigated by x-ray diffraction analysis (XRD), Hall Effect measurement (HL5500) and atomic force microscopy (AFM). The results show that the as-grown InN films with smooth surface roughness of 4.59nm and preferred orientation are successfully achieved at the optimized deposition temperature of 450°C, which was low temperature here. The InN films reported here will provide various opportunities for the development of high efficiency and high performance semiconductor devices based on InN materials.