Evaluation of defect concentration in doped SWCNT

Abstract

In the present study we analyze and discus Raman spectra of doped SWCNTs. We focus on the development of the integral area of the D mode (AD), the TG mode (ATG) and the G' mode (AG'). It is shown that area of the D band is significantly attenuated in doped carbon nanotubes samples for both semiconducting and metallic tubes. A similar dependence on the doping as in the case of the area of the D mode was found also for the area of the TG and the G' mode. The area of the G' mode was found to be more significantly dependent on the electrode potential than the area of the TG mode. However, this difference is only small, hence the AD/AG' and AD/ATG ratios give only slightly different results in evaluation of the amount of defects in doped SWCNT samples. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.