Abstract
Melting and recrystallization phenomena of plasmaenhanced chemical vapor deposition (PECVD) of amorphous silicon (a-Si) thin films for both frontside and backside excimer laser crystallization (ELC) have been investigated by in-situ realtime optical reflectivity and transmissivity (TRORT) measurements with nanosecond time resolution. The longest melt-phase duration of 90-nm-thick a-Si thin films for both frontside and backside ELC is 350 ns. The ablation excimer laser fluence of a-Si thin films for frontside ELC is higher than that of backside ELC because SiO2 films show anti-reflectivity for excimer laser beam. TRORT measurements reveal that the solidification direction of molten Si for both frontside and backside ELC start from the interface of the sample and the recrystallization mechanism for both frontside and backside ELC are the same.
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CITATION STYLE
Kuo, C. C., Yeh, W. C., Hsiao, C. P., & Jeng, J. Y. (2007). The mechanism of amorphous silicon thin films using XeF excimer laser crystallization. In Proceedings of the 35th International MATADOR 2007 Conference (pp. 25–28). Springer Science and Business Media, LLC. https://doi.org/10.1007/978-1-84628-988-0_6
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