The effect of optical phonon scattering on the on-current and gate delay time of CNT-FETs

Abstract

The performance of carbon nanotube field-effect transistors is analyzed, using the non-equilibrium Green's function formalism. The role of the inelastic electron-phonon interaction on the both on-current and gate delay time of these devices is studied. For the calculation of the gate delay time the quasi-static approximation is assumed. The results confirm experimental data of carbon nanotube transistors, where the on-current can be close to the ballistic limit, but the gate delay time can be far below that limit.