We report on two pulse, degenerate four-wave mixing (DFWM) measurements on shallow Inx Ga1-x N GaN multiquantum wells (MQWs) grown on sapphire substrates. These reveal pulse length limited signal decays. We have found a 10:1 resonant enhancement of the DFWM signal at the excitonic transition frequencies which thereby give a sharp discrimination of the discrete excitonic contributions within the featureless distribution seen in absorption spectra. The exciton resonances have peak positions, which yield good overall agreement with a full k•p model calculation for the quantum well (QW) energy levels and optical transition matrix elements. Inx Ga1-x N GaN MQWs generally exhibit strongly inhomogeneously broadened excitation spectra due to indium fluctuation effects; this approach therefore affords a practical method to extract information on the excited excitonic states not available previously. © 2006 The American Physical Society.
CITATION STYLE
Kundys, D. O., Wells, J. P. R., Andreev, A. D., Hashemizadeh, S. A., Wang, T., Parbrook, P. J., … Skolnick, M. S. (2006). Resolution of discrete excited states in Inx Ga1-x N multiple quantum wells using degenerate four-wave mixing. Physical Review B - Condensed Matter and Materials Physics, 73(16). https://doi.org/10.1103/PhysRevB.73.165309
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