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The sensing mechanism and the response simulation of the MIS hydrogen sensor

Advances in Computer and Information Sciences and Engineering (2008) 268-272
DOI: 10.1007/978-1-4020-8741-7_49
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Abstract

The Pd0.96Cr0.04 alloy gated metal-insulatorsemiconductor (MIS) hydrogen sensor has been studied. A new sensing mechanism is proposed that the sensor response is related to the protons. The capacitance-voltage (CV) curve, conductancevoltage (GV) curve, and the sensor response are simulated. © Springer Science+Business Media B.V. 2008.

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APA

Zhang, L., McCullen, E., Rimai, L., Ng, K. Y. S., Naik, R., & Auner, G. (2008). The sensing mechanism and the response simulation of the MIS hydrogen sensor. In Advances in Computer and Information Sciences and Engineering (pp. 268–272). https://doi.org/10.1007/978-1-4020-8741-7_49

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