Thermal annealing effect on the intersublevel transitions in InAs quantum dots

Abstract

Isochronal thermal annealing effect on the photoluminescence (PL) spectra of intersublevel transitions in InAs self-assembled quantum dots was investigated. Several peaks due to intersublevel transitions in the quantum dots were observed in the PL spectra of two samples consisting of 10 stacks of InAs quantum dots and InP barriers. Isochronal furnace annealing in the temperature range of 500-800°C was conducted on the two samples. The results show that the intensity of the PL peaks was dramatically reduced, and a new peak attributed to the wetting layer was observed after the samples were thermally annealed above 550°C. A small blue shift of the PL peaks due to intermixing was observed. © 2001 American Institute of Physics.