Large-Signal Model of the Metal-Insulator-Graphene Diode Targeting RF Applications

Abstract

We present a circuit-design compatible large-signal compact model of metal-insulator-graphene (MIG) diodes for describing its dynamic response for the first time. The model essentially consists of a voltage-dependent diode intrinsic capacitance coupled with a static voltage-dependent current source, and the latter accounts for the vertical electron transport from/toward graphene, which has been modeled by means of the Dirac-thermionic electron transport theory through the insulator barrier. Importantly, the image force effect has been found to play a key role in determining the barrier height, so it has been incorporated into the model accordingly. The resulting model has been implemented in Verilog-A to be used in the existing circuit simulators and benchmarked against an experimental 6-nm TiO2 barrier MIG diode working as a power detector.