Hydrogen Reactions in c-Si:B During Illumination at Room Temperature

Abstract

Herein, effects related to reactions involving hydrogen during carrier injection at room temperature in boron-doped Czochralski-grown silicon wafers are investigated. It is shown that these conditions lead to boron–oxygen defect regeneration. Under these conditions, bulk material quality degradation induced by a dark annealing can be temporarily recovered in the same way as light and elevated temperature-induced degradation. Dissociation of boron–hydrogen pairs by carrier injection at room temperature is observed in parallel. These observations are discussed within the framework of known hydrogen reactions. With this study, significant aspects of hydrogen-related meta-stabilities at temperatures that are most relevant for solar modules in moderate climates are covered.