Focused Ion Beam systems have many uses in failure analysis (FA), and dual beam systems are a must for state-of-the-art integrated circuit and MEMS device failure analysis. Finding opens/shorts in circuitry by utilizing passive voltage contrast is a common usage. Using the dual beam for defect review on wafers enables you to find and section defects too small to see with optical microscopes. To cross-section particles and mechanically-weak structures and to generate smear-free cross-sections of structures having layers of differing hardnesses is very difficult to do using mechanical techniques; this becomes routine using the dual beam FIB. The dual beam FIB is a must-have tool for cross-sectioning MEMS devices without inducing catastrophic damage. © 2005 Springer Science+Business Media, Inc.
CITATION STYLE
Holdford, B. (2005). The uses of dual beam FIB in microelectronic failure analysis. In Introduction to Focused Ion Beams: Instrumentation, Theory, Techniques and Practice (pp. 107–132). Springer US. https://doi.org/10.1007/0-387-23313-X_6
Mendeley helps you to discover research relevant for your work.