Abstract
Though most widely used as a two-dimensional (2D) dopant-profiling tool, scanning capacitance microscopy (SCM) has a diverse array of applications in the semiconductor industry. This chapter highlights three emerging applications of SCM: failure analysis of semiconductor devices, imaging of device operation, and the visualization of radiation effects. Each application is described in detail, providing practical experimental details and a number of examples. © 2007 Springer Science+Business Media, LLC.
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CITATION STYLE
Nakakura, C. Y., Tangyunyong, P., & Anderson, M. L. (2007). Scanning capacitance microscopy applications in failure analysis, active device imaging, and radiation effects. In Scanning Probe Microscopy (Vol. 2, pp. 634–662). Springer New York. https://doi.org/10.1007/978-0-387-28668-6_24
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