Pass transistor operation modeling for nanoscale technologies

Abstract

This paper studies the operation of the pass transistor structure taking into account secondary effects which become intense in nanoscale technologies. The different regions of operation are determined and the differential equation which describes the pass transistor operation is solved analytically. Appropriate approximations about the current waveforms are used simplifying the modeling procedure without significant influence on the accuracy. The evaluation of the model was made through comparison with HSpice simulation results and by using three different technologies: CMOS 65 nm, CMOS 32 nm and CMOS 32nm with high-K dielectric. © 2011 Springer-Verlag.