Effect of oxygen precipitation through annealing process on lifetime degradation by Czochralski-Si crystal growth conditions

Abstract

In this study, the effects of oxygen precipitation on the minority carrier lifetime were evaluated in conjunction with crystal growth conditions. It was revealed that oxygen precipitates and dislocations formation are suppressed and lifetime deterioration is suppressed in Czochralski (Cz)-Si, which is maintained at high temperature, followed by rapid cooling during crystal growth. In addition, the interface at the oxygen precipitate/Si matrix and dislocations were the dominant carrier recombination centers. From the above, it was suggested that controlling oxygen precipitation by crystal growth conditions can contribute to high-efficiency solar cells.