Modeling of tunneling through a three-layer gate stack with/without a quantum well

Abstract

Accurate analytical formulas for tunneling probability through a three-layer gate stack with semiconductor/metallic quantum well or without a quantum well were derived. For the case of a three-barrier stack (no quantum well) the authors derived a simplified analytical Wentzel–Krammers–Brillouin equivalent formula, which was generalized for the case of an n-barrier stack. The tunneling through a three-layer stack with a quantum well was considered. The effect of scattering on tunneling probability and current-voltage characteristics of the double-barrier metal-oxide-semiconductor system was investigated.