Abstract
We describe high resolution x-ray photoemission spectroscopy (XPS) measurements of six SiO//2/Si interfaces representing contrasts between oxides grown on (100) vs. (111) surfaces, grown by wet and dry oxidation processes, and processed with and without post-oxidation annealing (POA). These measurements reveal significant trends in the distribution of suboxide states among these samples.
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CITATION STYLE
APA
Hecht, N. H., Grunthaner, P. J., & Grunthaner, F. J. (1985). NEW RESULTS ON THE SiO2/Si INTERFACE. (pp. 217–220). Springer-Verlag. https://doi.org/10.1007/978-1-4615-7682-2_47
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