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FULL-CHIP SIMULATION OF LSI LITHOGRAPHY MASK USING MULTI-SCALE ANALYSIS

  • Sawamura J
  • Suzuki K
  • Ohtsubo H
Springer Netherlands, (2007), 1641-1646
DOI: 10.1007/978-1-4020-3953-9_95
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Abstract

A novel multi-scale method has been proposed for estimating the in-plane displacements of LSI lithography mask. In order to verify the applicability of proposal method, the mask of simple pattern has been simulated. The simulated results agree with experimental mask feature qualitatively. Moreover, simulation for real device pattern shows full-chip simulation can be performed in practical short time by using this method.

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Sawamura, J., Suzuki, K., & Ohtsubo, H. (2007). FULL-CHIP SIMULATION OF LSI LITHOGRAPHY MASK USING MULTI-SCALE ANALYSIS. In Computational Methods (pp. 1641–1646). Springer Netherlands. https://doi.org/10.1007/978-1-4020-3953-9_95

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