Optical, Structural and Electrical Properties of Cu Doped CdS Thin Films Fabricated by SILAR Method

Abstract

Cu doped CdS nano crystalline thin films were deposited using one of the simple Successive Ionic Layer Adsorption and Reaction (SILAR) method. The result and impact of Cu doping concentration of 3, 6 and 9 Mol% on the optical, structural, morphological and electrical properties of Cu doped CdS films were studied. XRD studies exhibited that the Cu doped CdS thin were polycrystalline with cubic phase crystal structure. FESEM results show that the surface morphology of the prepared films changes with Cu doping concentration. A blue shift in the optical band gap was found in the UV visible spectroscopy. Hall measurements clearly indicate the result and impact of Cu doping concentration on electrical resistivity and conductivity and it shows comparatively high electrical conductivity at 9Mol% of Cu doping concentration.