Full silicon wafers contaminated with Si3N4 and SiO2 particles are cleaned using a dry laser cleaning tool equipped with an excimer laser. Cleaning efficiency is analyzed as a function of laser fluence, repetition rate and number of pulses. The cleaning process and the influence of experimental parameters on laser cleaning efficiency are simulated using a model.
CITATION STYLE
Vereecke, G., Röhr, E., & Heyns, M. M. (1999). Laser-assisted removal of particles on silicon wafers. Journal of Applied Physics, 85(7), 3837–3843. https://doi.org/10.1063/1.369754
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