We have investigated the effect of rapid thermal annealing (RTA) on the optical and structural properties of GaAsN alloys using photoluminescence (PL) and double-crystal x-ray diffraction. We observe a significant anomalous strain enhancement during RTA and a blueshift of the PL peak energy accompanied by a reduction in the emission linewidth. The PL features are attributed to an improvement in the homogeneity of the alloy, and the strain enhancement reflects a change in N-related complexes during annealing. Based on a defect model, an interstitial nitrogen concentration of 1.8× 1019 cm-3 is deduced prior to annealing. © 2007 American Institute of Physics.
CITATION STYLE
Zhuang, Q. D., Krier, A., & Stanley, C. R. (2007). Strain enhancement during annealing of GaAsN alloys. Journal of Applied Physics, 101(10). https://doi.org/10.1063/1.2717603
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