Top and bottom gate polymeric thin film transistor analysis through two dimensional numerical device simulation

Abstract

This paper presents detailed analysis of bottom and top gate Polymeric/ Organic Thin Film Transistors (PTFTs/OTFTs) structures through two dimensional numerical device simulations. Further discussion shows various characteristics and properties of bottom gate bottom contact (BGBC), bottom gate top contact (BGTC), top gate top contact (TGTC) and top gate bottom contact (TGBC) Polymeric Transistors (PTs). Transistor based on organic semiconductor conducting polymers or small molecules used as active layer is identified to manage electric current flow which is known as PTFTs/OTFTs. The performance parameters of PTFTs are evaluated from output and transfer characteristics of different structures. Device characteristics parameters have been evaluated in terms of on/off current ratio, threshold voltage, field effect mobility, sub threshold slope, capacitance, transconductance and drive current. PTFTs/OTFTs are considered as promising switching device for future development of low-cost and large-area electronics applications such as flexible displays, organic memory, digital circuits and Sensors. © 2012 Springer India Pvt. Ltd.