Phosphorus doped WO3 (PxW1-xO3) ceramics were fabricated by a solid state reaction. Temperature and frequency dependence of dielectric properties for the PxW1-xO 3 (x = 0-0.15) ceramics were evaluated at the temperature between -20 to 80°C. The dielectric constant of the P0.05W 0.95O3 ceramic was 3600-5800 at the frequency range from 1kHz to 1MHz in the room temperature, and the dielectric loss of the P 0.05W0.95O3 ceramic were less than 0.1 at the frequency of higher than 160 kHz. The dielectric anomaly peak of the WO 3 ceramic has been observed at 20°C, and the dielectric anomaly peak of the P0.05W0.95O3 ceramic has been observed at about 0°C. The interaction between temperature dependence of dielectric properties (dielectric anomaly) ceramics and structural change of the WO3 and P0.05W0.95O3 were evaluated by Raman spectra. © 2014 The Ceramic Society of Japan. All rights reserved.
CITATION STYLE
Nose, A., Miyazaki, H., Akishige, Y., Tukada, S., Suzuki, H., Adachi, N., & Ota, T. (2014). Correlation between a dielectric anomaly and a phase transition of sintered phosphorus doped WO3 ceramics. Journal of the Ceramic Society of Japan, 122(1421), 25–28. https://doi.org/10.2109/jcersj2.122.25
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