We have studied the buried oxide integrity in oxygen plasma-enhanced low-temperature wafer bonding. As observed by cross-sectional scanning electron microscopy, the bonding strength of the oxygen plasma-treated sample is so large that forced separation for a 600 °C bonded wafer takes place at the heterointerface of the thermal oxide and the Si substrate rather than at the oxide-oxide bonding interface. The plasma-enhanced bonding shows good structure property with negligible defects as observed by cross-sectional transmission electron microscopy. From capacitance-voltage measurement, good electrical property is evidenced by the low oxide-charge and interface-trap densities of -2.0×1010cm-2and 3×1010eV-1cm-2, respectively, from capacitance-voltage measurements.
CITATION STYLE
Wu, Y. H., Huang, C. H., Chen, W. J., Lin, C. N., & Chin, A. (2000). The Buried Oxide Properties in Oxygen Plasma-Enhanced Low-Temperature Wafer Bonding. Journal of The Electrochemical Society, 147(7), 2754. https://doi.org/10.1149/1.1393601
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