Data reading procedure from nanostructured semiconductor X-ray optical memory (X-ROM) system detects data by measuring the changes in x-ray micro beam intensity reflected from the various surface points of data storage media. Two different mechanisms of the digital information read-out procedure, which are utilizing grazing-angle incidence X-ray backscattering diffraction (GIXB) and grazing-angle incidence X-ray reflection (GIX) techniques respectively, enable, in principle, the fabrication and exploitation of two-layer X-ROM. Angle of incidence of the x-ray micro beam is different for each storage layer of the proposed two-layer X-ROM. © 2007 Springer.
CITATION STYLE
Bezirganyan, H. P., Bezirganyan, S. E., Bezirganyan, H. H., & Bezirganyan, P. H. (2007). Two-layer ultra-high density X-ray optical memory. In NATO Security through Science Series B: Physics and Biophysics (pp. 495–498). Springer Verlag. https://doi.org/10.1007/978-1-4020-5724-3_50
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